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PE0106R Datasheet - semi one

PE0106R - N-Channel Enhancement Mode Power MOSFET

PE0106R Features

* VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Excellent package for good heat dissipation Application

* Power switching application

* Hard switched and high frequ

PE0106R-semione.pdf

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Datasheet Details

Part number:

PE0106R

Manufacturer:

semi one

File Size:

820.14 KB

Description:

N-channel enhancement mode power mosfet.

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