PE0106R Datasheet, Mosfet, semi one

✔ PE0106R Features

VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent

✔ PE0106R Application

General Features
VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
High density cell design for

PDF File Details

Part number:

PE0106R

Manufacturer:

semi one

File Size:

820.14 KB

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide va

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TAGS

PE0106R N-Channel Enhancement Mode Power MOSFET semi one