PE01H18T

N-Channel Trench Power MOSFET

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Datasheet Details

Part number:

PE01H18T

Manufacturer:

semi one

File Size:

623.71 KB

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📄 Download PE01H18T Datasheet PDF

Description:

N-channel trench power mosfet.
N-Channel Trench Power MOSFET General Description The PE01H18T is N-channel MOS Field Effect Transis.
The PE01H18T is N-channel MOS Field Effect Transistor designed for high current switching applicatio.

✔ PE01H18T Features

VDS=100V; ID=118A@ VGS=10V; RDS(ON)

✔ PE01H18T Application

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike contr

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PE01H18T N-Channel Trench Power MOSFET semi one

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