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PE01H18T N-Channel Trench Power MOSFET

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Description

N-Channel Trench Power MOSFET General .
The PE01H18T is N-channel MOS Field Effect Transistor designed for high current switching applications.

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Datasheet Specifications

Part number: PE01H18T
Manufacturer: semi one
File Size: 623.71 KB
Datasheet: PE01H18T-semione.pdf
Description: N-Channel Trench Power MOSFET

Features

* VDS=100V; ID=118A@ VGS=10V; RDS(ON)

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PE01H18T N-Channel Trench Power MOSFET semi one

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