PE1011E Datasheet, Mosfet, semi one

PE1011E Features

• Mosfet
• VDS = -20V,ID =-0.6A RDS(ON) <700mΩ @ VGS=-4.5V RDS(ON) <860mΩ @ VGS=-2.5V
• High Power and current handing capability
• Lead free product is acquired

PDF File Details

Part number:

PE1011E

Manufacturer:

semi one

File Size:

608.40kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The PE1011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

TAGS

PE1011E

semi one

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