PE1012E Datasheet, Mosfet, semi one

PE1012E Features

• Mosfet
• VDS = 20V,ID =0.6A RDS(ON) <700mΩ @ VGS=4.5V RDS(ON) <850mΩ @ VGS=2.5V
• High Power and current handing capability
• Lead free product is acquired
• Ga

PDF File Details

Part number:

PE1012E

Manufacturer:

semi one

File Size:

113.44kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

TAGS

PE1012E

semi one

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