PE1012E N-Channel Enhancement Mode Power MOSFET

semi one

Description

PE1012E N-Channel Enhancement Mode Power MOSFET .
The PE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: PE1012E
Manufacturer: semi one
File Size: 113.44 KB
Datasheet: PE1012E-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =0.6A RDS(ON)

PE1012E Distributors

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PE1012E N-Channel Enhancement Mode Power MOSFET semi one

semi one PE1012E-like datasheet