PE10N10

N-Channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number:

PE10N10

Manufacturer:

semi one

File Size:

837.31 KB

Description:

N-channel enhancement mode power mosfet.
PE10N10 N-Channel Enhancement Mode Power MOSFET Description The PE10N10 uses advanced trench techno.
The PE10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch.

✔ PE10N10 Features

VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stabi

✔ PE10N10 Application

General Features
VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ)
High density cell design for

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PE10N10 N-Channel Enhancement Mode Power MOSFET semi one

Datasheet Details

File Size:

Description:

✔ PE10N10 Features

✔ PE10N10 Application

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