PE10N10 N-Channel Enhancement Mode Power MOSFET

Description

PE10N10 N-Channel Enhancement Mode Power MOSFET .
The PE10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: PE10N10
Manufacturer: semi one
File Size: 837.31 KB
Datasheet: PE10N10-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technolo

PE10N10 Distributors

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PE10N10 N-Channel Enhancement Mode Power MOSFET semi one

semi one PE10N10-like datasheet