PE3400A N-Channel Enhancement Mode Power MOSFET

Description

PE3400A N-Channel Enhancement Mode Power MOSFET .
The PE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: PE3400A
Manufacturer: semi one
File Size: 622.02 KB
Datasheet: PE3400A-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V S Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

Applications

* Load switch
* Power management SOT-23 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junctio

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PE3400A N-Channel Enhancement Mode Power MOSFET semi one

semi one PE3400A-like datasheet