PE3 Datasheet - Tyco Electronics

PE3 GaAs Foundry Services PROCESS PE3

M/A-COM’s PE3 process utilizes molecular beam epitaxy (MBE) to implement a MESFET active layer structure that achieves high efficiency and breakdown for multi-watt power applications thru 18GHz. The focus is on products for moderate to high volume applications. M/A-COM offers a full compliment of fo.

PE3 Features

* 0.5 µm MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging PE3 V2.00 Typical RF Performance FC06 (6X150) 900 um FET Param. M

PE3_TycoElectronics.pdf