PE30100K Datasheet, Mosfet, semi one

PE30100K Features

• Mosfet
• VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

PE30100K

Manufacturer:

semi one

File Size:

762.90kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE30100K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

PE30100K Application

• Applications General Features
• VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
• High density cell design for ultra low Rd

TAGS

PE30100K

semi one

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