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PE3080K - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PE3080K
Manufacturer	semi one
File Size	247.89 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE3080K-semione.pdf

PE3080K Product details

Description

The PE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =30V,ID =80A RDS(ON) < 7.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

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Published: Dec 3, 2018 |