PE3080K N-Channel Enhancement Mode Power MOSFET

semi one

Description

PE3080K N-Channel Enhancement Mode Power MOSFET .
The PE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: PE3080K
Manufacturer: semi one
File Size: 247.89 KB
Datasheet: PE3080K-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =80A RDS(ON) < 7.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation Schematic diagram

PE3080K Distributors

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PE3080K N-Channel Enhancement Mode Power MOSFET semi one

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