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PE3050K N-Channel Enhancement Mode Power MOSFET

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Description

PE3050K N-Channel Enhancement Mode Power MOSFET .
The PE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
PE3050K
Manufacturer
semi one
File Size
427.06 KB
Datasheet
PE3050K-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation

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