PE3 Datasheet | Specifications & PDF Download

PE30100K N-Channel Enhancement Mode Power MOSFET Description The PE30100K uses advanced trench technology to provide excellent RDS(ON) and low gate c

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PE30100K N-Channel Enhancement Mode Power MOSFET Description The PE30100K uses advanced trench technology and design to provide excellent RDS(ON) wit

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PE3080K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE3080K uses advanced trench technology and design to provide excellent RDS(ON) with

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D A T A S H E E T Lighting Imaging Telecom Cermax® Xenon Arc Lamps PE300B-10F and PE300B-10UV CERMAX® FOCUSED XENON ARC LAMPS Description The Ce

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N and P Channel Enhancement Mode Power MOSFET Description The PE3024KC uses advanced trench technology to provide excellent RDS(ON) and low gate charg

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Product Specification PE3336 Product Description Peregrine’s PE3336 is a high performance integer-N PLL capable of frequency synthesis up to 3000 MHz

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D A T A S H E E T Lighting Imaging Telecom Cermax® Xenon Arc Lamps PE300BF and PE300BUV CERMAX® XENON ARC LAMPS Description The Cermax® xenon ar

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D A T A S H E E T Lighting Imaging Telecom Cermax® Xenon Arc Lamps PE300B-10F and PE300B-10UV CERMAX® FOCUSED XENON ARC LAMPS Description The Ce

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D A T A S H E E T Lighting Imaging Telecom Cermax® Xenon Arc Lamps PE300BF and PE300BUV CERMAX® XENON ARC LAMPS Description The Cermax® xenon ar

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N-Channel Enhancement Mode Power MOSFET Description The PE30D10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c

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PE3401A P-Channel Enhancement Mode Power MOSFET Description The PE3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge

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PE3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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PE3010 N-Channel Enhancement Mode Power MOSFET Description The PE3010 uses advanced trench technology and design to provide excellent RDS(ON) with lo

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Product Description Peregrine’s PE3236 is a high performance integer-N PLL capable of frequency synthesis up to 2.2 GHz. The superior phase noise perf

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P-Channel Enhancement Mode Power MOSFET Description The PE30P65K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It

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P-Channel Enhancement Mode Power MOSFET Description The PE30P13DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It

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PE3401 P-Channel Enhancement Mode Power MOSFET Description The PE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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PE3404A N-Channel Enhancement Mode Power MOSFET Description The PE3404A uses advanced trench technology to provide excellent RDS(ON) and low gate cha

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TECH. CORP. SPECIFICATIONS CUSTOMER SAMPLE CODE MASS PRODUCTION CODE SAMPLE VERSION SPECIFICATIONS EDITION DRAWING NO. (Ver.) PACKAGING NO. (Ver.)

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