PE3406A Datasheet, Mosfet, semi one

PE3406A Features

  • Mosfet
  • VDS = 30V,ID = 5.8A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V
  • ESD=2500V
  • Lead free product is acquired
  • Surface mount package Application

PDF File Details

Part number:

PE3406A

Manufacturer:

semi one

File Size:

685.98kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE3406A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a loa

Datasheet Preview: PE3406A 📥 Download PDF (685.98kb)
Page 2 of PE3406A Page 3 of PE3406A

PE3406A Application

  • Applications Genera Features
  • VDS = 30V,ID = 5.8A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V
  • ESD=2500V
  • Lead f

TAGS

PE3406A
N-Channel
Enhancement
Mode
Power
MOSFET
semi one

📁 Related Datasheet

PE3400 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

PE3400A - N-Channel Enhancement Mode Power MOSFET (semi one)
PE3400A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge.

PE3401 - P-Channel Enhancement Mode Power MOSFET (semi one)
PE3401 P-Channel Enhancement Mode Power MOSFET Description The PE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

PE3401 - P-Channel Power MOSFET (ChipSourceTek)
PE3401 P-Channel Enhancement Mode Power MOSFET Description The PE3401 uses advanced trench technology to provide excellent RDS(ON) and low gate charg.

PE3401A - P-Channel Enhancement Mode Power MOSFET (semi one)
PE3401A P-Channel Enhancement Mode Power MOSFET Description The PE3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge.

PE3401A - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE3401A P-Channel Enhancement Mode Power MOSFET Description The PE3401A uses advanced trench technology to provide excellent RDS(ON) and low gate cha.

PE3401F - P-Channel Enhancement Mode Power MOSFET (semi one)
P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE3401F uses advanced trench technology to provide excellent RDS(ON), low gate charge and oper.

PE3404A - N-Channel Enhancement Mode Power MOSFET (semi one)
PE3404A N-Channel Enhancement Mode Power MOSFET Description The PE3404A uses advanced trench technology to provide excellent RDS(ON) and low gate cha.

PE3407 - P-Channel Enhancement Mode Power MOSFET (semi one)
PE3407 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE3407 uses advanced trench technology to provide excellent RDS(ON), This device is su.

PE3407A - P-Channel Enhancement Mode Power MOSFET (semi one)
PE3407A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE3407A uses advanced trench technology to provide excellent RDS(ON), This device is .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts