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PE3409 - P-Channel Enhancement Mode Power MOSFET

semi one

The PE3409 by semi one is a P-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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PE3409 P-Channel Enhancement Mode Power MOSFET by semi one - Datasheet Preview — Official preview page of the PE3409 P-Channel Enhancement Mode Power MOSFET datasheet (semi one).

Datasheet Details

Part number	PE3409
Manufacturer	semi one
File Size	861.45 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PE3409-semione.pdf
Additional preview pages of the PE3409 datasheet.

PE3409 Product details

Description

The PE3409 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =-30V,ID =-5.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.

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Published: Dec 3, 2018 |