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PE0106R - N-Channel Enhancement Mode Power MOSFET

PE0106R Description

N-Channel Enhancement Mode Power MOSFET .
The PE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

PE0106R Features

* VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

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Datasheet Details

Part number
PE0106R
Manufacturer
semi one
File Size
820.14 KB
Datasheet
PE0106R-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PE0106R-like datasheet

PE0106R Stock/Price