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TPM2015Q - Automotive Single-Channel Ultra-Highspeed GaN Predriver

General Description

AEC-Q100 Grade-1 Qualified (TPM2015Q Only) 5-V Single Supply with Optimized Output Damping for Gan Reliability 7-A Peak Source and 5-A Sink-Drive Current 0.69-ns Minimum Input Pulse Width (Typical) Low Propagation Delay (2-ns Typical) Opti

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Datasheet Details

Part number TPM2015Q
Manufacturer 3PEAK
File Size 1.48 MB
Description Automotive Single-Channel Ultra-Highspeed GaN Predriver
Datasheet download datasheet TPM2015Q Datasheet

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TPM2015Q Automotive Single-Channel Ultra-Highspeed GaN Predriver Features Description • AEC-Q100 Grade-1 Qualified (TPM2015Q Only) • 5-V Single Supply with Optimized Output Damping for Gan Reliability • 7-A Peak Source and 5-A Sink-Drive Current • 0.69-ns Minimum Input Pulse Width (Typical) • Low Propagation Delay (2-ns Typical) • Optimized Pinout for Nanosecond-pulse-width • Fast Rise and Fall Times (0.45-ns and 0.45-ns Typical) • ESD Protection Exceeds JESD 22 – 6-kV HBM, 1.5-kV CDM • Available in Flip-Chip QFN2X2-10 Package Applications The TPM2015Q family of products are low-side singlechannel ultra-highspeed gate drivers for GaN and logiclevel MOSFETs.