Datasheet Details
| Part number | TPM2015Q |
|---|---|
| Manufacturer | 3PEAK |
| File Size | 1.48 MB |
| Description | Automotive Single-Channel Ultra-Highspeed GaN Predriver |
| Datasheet | TPM2015Q-3PEAK.pdf |
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Overview: TPM2015Q Automotive Single-Channel Ultra-Highspeed GaN Predriver.
| Part number | TPM2015Q |
|---|---|
| Manufacturer | 3PEAK |
| File Size | 1.48 MB |
| Description | Automotive Single-Channel Ultra-Highspeed GaN Predriver |
| Datasheet | TPM2015Q-3PEAK.pdf |
|
|
|
• AEC-Q100 Grade-1 Qualified (TPM2015Q Only) • 5-V Single Supply with Optimized Output Damping for Gan Reliability • 7-A Peak Source and 5-A Sink-Drive Current • 0.69-ns Minimum Input Pulse Width (Typical) • Low Propagation Delay (2-ns Typical) • Optimized Pinout for Nanosecond-pulse-width • Fast Rise and Fall Times (0.45-ns and 0.45-ns Typical) • ESD Protection Exceeds JESD 22 – 6-kV HBM, 1.5-kV CDM • Available in Flip-Chip QFN2X2-10 Package Applications The TPM2015Q family of products are low-side singlechannel ultra-highspeed gate drivers for GaN and logiclevel MOSFETs.
It is optimized for high-speed applications such as Lidar and high-density power convertors with enhanced low propagation delay design.
The 2-mm×2-mm flip-chip QFN package of the TPM2015 minimizes parasitic inductance in the gate driver power loop and achieves state-of-the-art narrow pulse width as short as 0.69 ns.
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