VDS4616A4A Description
The VDS4616A4A are two-bank Synchronous DRAMs organized as 524,288 words x 16 bits x 2 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications.
VDS4616A4A Key Features
- Single 3.3V +/- 0.3V power supply -MRS Cycle with address key programs