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VDS6608A4A - Synchronous DRAM

This page provides the datasheet information for the VDS6608A4A, a member of the VDS6608A4A_A Synchronous DRAM family.

Datasheet Summary

Description

The VDS6608A4A are four-bank Synchronous DRAMs organized as 2,097,152 words x 8 bits x 4 banks.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Features

  • JEDEC standard LVTTL 3.3V power supply.
  • MRS Cycle with address key programs -CAS Latency (2 & 3) -Burst Length (1,2,4,8,& full page) -Burst Type (sequential & Interleave).
  • 4 banks operation.
  • All inputs are sampled at the positive edge of the system clock.
  • Burst Read single write operation.
  • Auto & Self refresh.
  • 4096 refresh cycle.
  • DQM for masking.
  • Package:54-pins 400 mil TSOP-Type II Ordering Information. Part No. VDS6608A.

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Datasheet preview – VDS6608A4A

Datasheet Details

Part number VDS6608A4A
Manufacturer A-Data Technology
File Size 198.75 KB
Description Synchronous DRAM
Datasheet download datasheet VDS6608A4A Datasheet
Additional preview pages of the VDS6608A4A datasheet.

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Full PDF Text Transcription

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V-Data Synchronous DRAM VDS6608A4A 2M x 8 Bit x 4 Banks General Description The VDS6608A4A are four-bank Synchronous DRAMs organized as 2,097,152 words x 8 bits x 4 banks. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications Features •JEDEC standard LVTTL 3.
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