AAT7357 Overview
The AAT7357 is a low threshold dual P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a TSSOP-8 footprint has been squeezed into the footprint of a TSOPJW-8 package.
AAT7357 Key Features
- Drain-Source Voltage (max): -20V Contiunous Drain Current1 (max) = -5A @ 25°C Low On-Resistance
- 39mΩ @ VGS = -4.5V
- 63mΩ @ VGS = -2.5V