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AAT7357 - P-Channel Power MOSFET

General Description

The AAT7357 is a low threshold dual P-channel MOSFET designed for the battery, cell phone, and PDA markets.

Key Features

  • Drain-Source Voltage (max): -20V Contiunous Drain Current1 (max) = -5A @ 25°C Low On-Resistance:.
  • 39mΩ @ VGS = -4.5V.
  • 63mΩ @ VGS = -2.5V Dual TSOPJW-8 Package D1 8.

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Datasheet Details

Part number AAT7357
Manufacturer AAT
File Size 216.69 KB
Description P-Channel Power MOSFET
Datasheet download datasheet AAT7357 Datasheet

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Full PDF Text Transcription for AAT7357 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AAT7357. For precise diagrams, tables, and layout, please refer to the original PDF.

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20V P-Channel Power MOSFET General Description The AAT7357 is a low threshold dual P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a TSSOP-8 footprint has been squeezed into the footprint of a TSOPJW-8 package. AAT7357 Features • • • Drain-Source Voltage (max): -20V Contiunous Drain Current1 (max) = -5A @ 25°C Low On-Resistance: — 39mΩ @ VGS = -4.5V — 63mΩ @ VGS = -2.5V Dual TSOPJW-8 Package D1 8 Applications • • • Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones Top View D1 7 D2 6 D2 5 Absolute Maximum Ratings TA = 25°C, unless otherwise noted.