Datasheet4U Logo Datasheet4U.com

AAT7361 - P-Channel Power MOSFET

General Description

The AAT7361 is a low threshold dual P-channel MOSFET designed for the battery, cell phone, and PDA markets.

Key Features

  • Drain-Source Voltage (max): -20V Continuous Drain Current1 (max) -3.0A @ 25°C Low On-Resistance:.
  • 100mΩ @ VGS = -4.5V.
  • 175mΩ @ VGS = -2.5V Dual TSOPJW-8 Package Top View D1 8 D1 7 D2 6 D2 5.

📥 Download Datasheet

Datasheet Details

Part number AAT7361
Manufacturer AAT
File Size 171.03 KB
Description P-Channel Power MOSFET
Datasheet download datasheet AAT7361 Datasheet

Full PDF Text Transcription for AAT7361 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AAT7361. For precise diagrams, and layout, please refer to the original PDF.

20V P-Channel Power MOSFET General Description The AAT7361 is a low threshold dual P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicT...

View more extracted text
designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the footprint of a TSOPJW8 package. AAT7361 Features • • • Drain-Source Voltage (max): -20V Continuous Drain Current1 (max) -3.0A @ 25°C Low On-Resistance: — 100mΩ @ VGS = -4.5V — 175mΩ @ VGS = -2.5V Dual TSOPJW-8 Package Top View D1 8 D1 7 D2 6 D2 5 Applications • • • Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones Absolute Maximum Ratings TA = 2