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ACE7310M - N-Channel 30-V (D-S) MOSFET

Description

The ACE7310M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance.

Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed.

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Datasheet preview – ACE7310M

Datasheet Details

Part number ACE7310M
Manufacturer ACE Technology
File Size 390.69 KB
Description N-Channel 30-V (D-S) MOSFET
Datasheet download datasheet ACE7310M Datasheet
Additional preview pages of the ACE7310M datasheet.

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Full PDF Text Transcription

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ACE7310M N-Channel 30-V (D-S) MOSFET Description The ACE7310M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. Features  Low rDS(on) trench technology  Low thermal impedance  Fast switching speed Applications  DC/DC Conversion  Power Routing  Motor Drives PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) ID(A) 30 5.5@ VGS = 10V 21 7.8 @ VGS = 4.
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