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ACE7310M Datasheet PDF

ACE Technology ACE7310M

The ACE7310M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance.
Part No. ACE7310M
Datasheet ACE7310M Download
Manufacturer
ACE Technology
Description N-Channel 30-V (D-S) MOSFET
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ACE7310M datasheet page 1 preview

DESCRIPTION

FEATURES

● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed

APPLICATIONS

● DC/DC Conversion
● Power Routing
● Motor Drives PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) ID(A) 30 5.5@ VGS = 10V 21 7.8 @ VGS = 4.5V 17

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulse Drain Current b TA=25 OC TA=70 OC Continuous Drain Current (Diode Continuous) a Power Dissipation a TA=25 OC TA=70 OC Operating Junction and Storage Temperature Range Symbol Limit Units VDS 30 V VGS ±20 V 21 ID 17.2 A IDM 80 IS 4.7 A 3.5 PD W 2 TJ,TSTG -55 to 150 OC Parame
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