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ACE7332M - N-Channel 30-V (D-S) MOSFET

Description

The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance.

Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Features.
  • VDS(V)=30V.
  • ID=15A (VGS=10V).
  • RDS(ON)＜8.5mΩ (VGS=10V).
  • RDS(ON)＜13mΩ (VGS=4.5V).

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Datasheet preview – ACE7332M

Datasheet Details

Part number ACE7332M
Manufacturer ACE Technology
File Size 388.06 KB
Description N-Channel 30-V (D-S) MOSFET
Datasheet download datasheet ACE7332M Datasheet
Additional preview pages of the ACE7332M datasheet.

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Full PDF Text Transcription

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ACE7332M N-Channel 30-V (D-S) MOSFET Description The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. Key Features  Low rDS(on) trench technology  Low thermal impedance  Fast switching speed Features  VDS(V)=30V  ID=15A (VGS=10V)  RDS(ON)＜8.5mΩ (VGS=10V)  RDS(ON)＜13mΩ (VGS=4.5V) PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) ID(A) 13 @ VGS = 10V 14 30 18 @ VGS = 4.
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