ACE Technology ACE7332M
The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance.| Part No. | ACE7332M |
|---|---|
| Datasheet | ACE7332M Download |
| Manufacturer |  ACE Technology |
| Description | N-Channel 30-V (D-S) MOSFET |
| Buy | Stock & Price |
DESCRIPTION
KeyFEATURES
● Low rDS(on) trench technology● Low thermal impedance
● Fast switching speed
FEATURES
● VDS(V)=30V● ID=15A (VGS=10V)
● RDS(ON)＜8.5mΩ (VGS=10V)
● RDS(ON)＜13mΩ (VGS=4.5V) PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) ID(A) 13 @ VGS = 10V 14 30 18 @ VGS = 4.5V 12
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) *AC TA=25 OC TA=70 OC Drain Current (Pulse) *B Power Dissipation TA=25 OC TA=70 OC Operating and Storage Temperature Range Symbol Max Unit VDS 30 V VGS ±20 V 15 ID 12 A IDM 50 3.5 PD W 2 TJ,Tstg -55 to 150 OC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a t <= 10 sec Steady State Symbol RθJA Max 35 81 Unit °C/W Packaging DFN3x3-8L TypeOrdering information ACE7332M XX + H Halogen - free Pb - free NN : DFN3*3-8L VER 1.1 1 ACE7332M N-Channel 30-V (D-S) MOSFETELECTRICAL CHARACTERISTICS
Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20V Min.
