Datasheet Summary
N-Channel 30-V (D-S) MOSFET
Description The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance.
Key Features
- Low rDS(on) trench technology
- Low thermal impedance
- Fast switching speed
Features
- VDS(V)=30V
- ID=15A (VGS=10V)
- RDS(ON)＜8.5mΩ (VGS=10V)
- RDS(ON)＜13mΩ (VGS=4.5V)
PRODUCT SUMMARY
VDS (V) rDS(on) (mΩ)
ID(A)
13 @ VGS = 10V
18 @ VGS =...