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ACE7331M - P-Channel 30-V MOSFET

Description

power loss and heat dissipation.

Features

  • Low rDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper lead frame DFN3x3-8L saves board space.
  • Fast switching speed.
  • High performance trench technology Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating temperature / storage temperatu.

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Datasheet preview – ACE7331M

Datasheet Details

Part number ACE7331M
Manufacturer ACE Technology
File Size 333.11 KB
Description P-Channel 30-V MOSFET
Datasheet download datasheet ACE7331M Datasheet
Additional preview pages of the ACE7331M datasheet.

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Full PDF Text Transcription

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ACE7331M P-Channel 30-V MOSFET Description The ACE7331M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
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