AFSEMI SSC8036GS1
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.| Part No. | SSC8036GS1 |
|---|---|
| Datasheet | SSC8036GS1 Download |
| Manufacturer | AFSEMI |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
●APPLICATIONS
VDS 30V VGS ±20V RDSon TYP 20mR@10V 30mR@4V5 ID 8.5A● Load Switch
● Portable Devices
● DCDC conversion
●
GENERAL DESCRIPTION
● Pin configuration● Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 1/5 Analog Future SSC8036GS1
●
ABSOLUTE MAXIMUM RATINGS
@ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current Total Power Dissipation (note1) Continuous Pulse TA = 25°C TA = 75°C ID IDM PD Operating and Storage Junction Temperature Range Note1: Surface Mounted on 1in2 pad area. TJ, TSTG●
ELECTRICAL CHARACTERISTICS
@ TA = 25°C unless otherwise specified Ratings 30 ±20 8.5 50 3 2.1 -55 to +150
