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SSC8036GSD Datasheet PDF

AFSEMI SSC8036GSD

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Part No. SSC8036GSD
Datasheet SSC8036GSD Download
Manufacturer AFSEMI
Description N-Channel Enhancement Mode MOSFET
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SSC8036GSD datasheet page 1 preview

FEATURES

● VDS 30V VGS ±20V RDSon TYP 39mR@10V 76mR@4V5 ID 4.5A
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GENERAL DESCRIPTION

APPLICATIONS

● Load Switch
● Portable Devices
● DCDC conversion Pin configuration Top View DD S
● Package Information 1D D G SSC-V1.0 1/5 Analog Future SSC8036GSD
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ABSOLUTE MAXIMUM RATINGS

@ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range VDSS VGSS ID IDM PD TJ, TSTG N-channel 30 ±20 4.5 20 1.1 -55 to +150 Unit V V A A W °C
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ELECTRICAL CHARACTERISTICS

@ TA = 25°C unless otherwise specified Parameter Drain–Source Breakdown Vo
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