SSC8036GS6B
SSC8036GS6B is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- VDS 30V
VGS ±20V
RDSon TYP 19m R@10V 23m R@4V5
ID 5A
- - General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
- Load Switch
- Portable Devices
- DCDC conversion
Pin configuration
Top View
D 3
- Package Information
12 GS
③
①②
SOT23
Units:mm
SSC-V1.0 http://.afsemi.
1/6
Analog Future
- Order information
Device
Package
SOT23
Marking
Shipping
3000/Tape&Reel
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage Continuous Drain Current a VGS@4.5V TA = 25°C Continuous Drain Current a VGS@4.5V TA = 70°C Plused Drain Current b Power Dissipation a TC = 25°C Power Dissipation a TC = 70°C Storage and Junction Temperature
VGSS...