SSC8036GS6
SSC8036GS6 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- VDS 30V
VGS ±20V
RDSon TYP 24m R@10V 36m R@4V5
ID 6A
- - General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
- Load Switch
- Portable Devices
- DCDC conversion
Pin configuration
Top View
D 3
- Package Information
12 GS
③
①②
SOT23
Units:mm
SSC-V1.0 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range
VDSS VGSS
ID IDM PD TJ, TSTG
N-channel 30 ±20 6 25 850
-55 to +150
Unit V V A A m W °C
- Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter...
