SSC8LA0GT8
SSC8LA0GT8 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS VGS
RDSon TYP
- Applications
- Desktop puter
- Notebook
100V ±20V
9m R@10V 13m R@4V5
60A
- Pin Configuration
- General Description
Top View
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
- Package Information
Units:mm
SSC-V1.0 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter
Drain-Source Voltage Gate-Source Voltage Operating and Storage Junction Temperature Range
Pulsed Drain Current (Note 2)
Mounted on PCB of Minimum Footprint Continuous Drain Current (Note 1)
Avalanche energy L=0.1m H C
Mounted on PCB of 1in2 Pad Area
Total Power Dissipation (Note 1)
Pulsed Drain Current (Note 2) Continuous Drain Current (25°C) Total Power Dissipation (25°C)
- Electrical Characteristics @ TA = 25°C...
