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AGM311MAP - MOSFET

Datasheet Summary

Description

The AGM311MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 30V 10.5mΩ 25A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching PDFN3.3.
  • 3.3 Pin Configuration.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM311MAP
Manufacturer AGMSEMI
File Size 502.55 KB
Description MOSFET
Datasheet download datasheet AGM311MAP Datasheet
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AGM311MAP ● General Description The AGM311MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 30V 10.5mΩ 25A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching PDFN3.3*3.3 Pin Configuration ■ Low Thermal resistance ● Application ■ MB/VGA Vcore D1 D1D2D2 ■ SMPS 2nd Synchronous Rectifier ■ POL application S1 G1 S2 G2 ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM311MAP Device AGM311MAP Device Package DFN3.3*3.3 Reel Size ---- Tape width ---- Quantity 5000 Table 1.
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