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AGM318D - MOSFET

Datasheet Summary

Description

to provide extremely low RDS(ON) .

protection applications.

Features

  • Advance high cell density Trench technology TO-252 Pin Configuration.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM318D
Manufacturer AGMSEMI
File Size 508.45 KB
Description MOSFET
Datasheet download datasheet AGM318D Datasheet
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Full PDF Text Transcription

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AGM318D ● General Description The AGM318D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low RDS(ON) . BVDSS RDSON ID This device is ideal for load switch and battery 30V 18mΩ 20A protection applications. ● Features ■ Advance high cell density Trench technology TO-252 Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ● Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Package Marking and Ordering Information Device Marking AAGM318D Device AGM318D Device Package TO-252 Reel Size ----- Table 1.
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