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AGM312M - MOSFET

Datasheet Summary

Description

The AGM312M combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM312M
Manufacturer AGMSEMI
File Size 1.60 MB
Description MOSFET
Datasheet download datasheet AGM312M Datasheet
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AGM312M ● General Description The AGM312M combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ●Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Product Summary BVDSS 30V -30V RDSON 10mΩ 28mΩ SOP-8 Pin Configuration S1 G1 S2 G2 D1 D1 D2 D2 D1 G1 S1 ID 11A -7.2A D2 G2 S2 Package Marking and Ordering Information Device Marking Device AGM312M AGM312M Device Package SOP-8 Reel Size 325mm Tape width 16mm Quantity 3000 Table 1.
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