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AGM314MAP - MOSFET

Datasheet Summary

Description

The AGM314MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGM314MAP
Manufacturer AGMSEMI
File Size 1.35 MB
Description MOSFET
Datasheet download datasheet AGM314MAP Datasheet
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AGM314MAP ● General Description The AGM314MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ■100% Avalanche tested ■100% DVDS tested ● Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Product Summary BVDSS 30V -30V RDSON 9mΩ 18.5mΩ ID 30A -20A PDFN3.3*3.3 Pin Configuration D1 D1D2D2 S1 G1 S2 G2 D1 D2 G1 G2 S1 S2 Package Marking and Ordering Information Device Marking Device AGM314MAP AGM314MAP Device Package PDFN3.3*3.
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