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AGM318MAP - MOSFET

Datasheet Summary

Description

The AGM318MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGM318MAP
Manufacturer AGMSEMI
File Size 905.99 KB
Description MOSFET
Datasheet download datasheet AGM318MAP Datasheet
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AGM318MAP ● General Description The AGM318MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ■100% Avalanche tested ■100% DVDS tested ● Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Product Summary BVDSS 30V -30V RDSON 17mΩ 23mΩ PDFN3.3*3.3 Pin Configuration ID 20A -18A Package Marking and Ordering Information Device Marking Device AGM318MAP AGM318MAP Device Package PDFN3.3*3.3 Reel Size 330mm Tape width 12mm Quantity 5000 Table 1.
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