AGM412D - MOSFET

Description

The AGM412D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s BVDSS RDSON ID 40V 10mΩ 30A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching TO-252 Pin Configuration D.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM412D
Manufacturer	AGMSEMI
File Size	485.73 KB
Description	MOSFET
Datasheet	AGM412D Datasheet
Additional preview pages of the AGM412D datasheet.

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Full PDF Text Transcription

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AGM412D ● General Description The AGM412D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 40V 10mΩ 30A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching TO-252 Pin Configuration D ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application DS G ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM412D Device AGM412D Device Package TO-252 Reel Size ---- Tape width ---- Quantity 2500 Table 1.

Published: Dec 28, 2024 |