AGM412S - MOSFET

Description

The AGM412S combines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s BVDSS RDSON ID 40V 11mΩ 13A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching SOP-8 Pin Configuration.
Low Thermal resistance.
100% Avalanche tested.
100% DVDS tested.

AGMSEMI

📥 Download Datasheet

Datasheet Details

Part number	AGM412S
Manufacturer	AGMSEMI
File Size	688.74 KB
Description	MOSFET
Datasheet	AGM412S Datasheet
Additional preview pages of the AGM412S datasheet.

📁 Similar Datasheet

AGM4002A-202 - LCD (ETC)
AGM4002A-401 - LCD (ETC)
AGM4002A-803 - LCD (ETC)
AGM40P55AP - MOSFET (AGM)
AGM4832B - LCD MODULE (AZ Displays)
AGM4832C - LCD MODULE (AZ Displays)
AGM4832D - LCD MODULE (AZ Displays)
AGM-12864A-901 - LCD Modules (AGT)
AGM1032A-FLW-FBH - LCD (AZ Displays)
AGM1064B - LIQUID CRYSTAL DISPLAY (AZ Displays)

Other Datasheets by AGMSEMI

AGM412D - MOSFET
AGM412MA - MOSFET
AGM412MAP - MOSFET
AGM418MNA - MOSFET
AGM4005LL - MOSFET
AGM4008LL - MOSFET
AGM4012A - MOSFET
AGM401A - MOSFET

Full PDF Text Transcription

Click to expand full text

AGM412S ● General Description The AGM412S combines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 40V 11mΩ 13A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching SOP-8 Pin Configuration ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM412S Device AGM412S Device Package SOP8 Reel Size 330mm Table 1.

Published: Dec 28, 2024 |