AGMSEMI AGM412MAP
The AGM412MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .| Part No. | AGM412MAP |
|---|---|
| Datasheet | AGM412MAP Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Product Summary This device is ideal for load switch and battery protection applications.●
FEATURES
BVDSS RDSON ID 40V 13mΩ 22A● Advance high cell density Trench technology
● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching PDFN3*3 Pin Configuration
● Low Thermal resistance
● Application
● MB/VGA Vcore
● SMPS 2nd Synchronous Rectifier
● POL application
● BLDC Motor driver Package Marking and Ordering Information Device Marking AGM412M Device AGM412MAP Device Package PDFN3*3 Reel Size ---- Tape width ---- Quantity 5000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Maximum Power Dissipation(Tc=25℃) Maximum Power Dissipation(Tc=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2.
