AGM412MAP - MOSFET

Description

The AGM412MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s BVDSS RDSON ID 40V 13mΩ 22A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching PDFN3.
3 Pin Configuration.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM412MAP
Manufacturer	AGMSEMI
File Size	469.99 KB
Description	MOSFET
Datasheet	AGM412MAP Datasheet
Additional preview pages of the AGM412MAP datasheet.

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Full PDF Text Transcription

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AGM412MAP ● General Description The AGM412MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 40V 13mΩ 22A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching PDFN3*3 Pin Configuration ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM412M Device AGM412MAP Device Package PDFN3*3 Reel Size ---- Tape width ---- Quantity 5000 Table 1.

Published: Dec 28, 2024 |