AGM418MNA - MOSFET

Description

The AGM418MNA combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.
100% Avalanche tested.
100% DVDS tested.

AGMSEMI

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Datasheet Details

Part number	AGM418MNA
Manufacturer	AGMSEMI
File Size	971.01 KB
Description	MOSFET
Datasheet	AGM418MNA Datasheet
Additional preview pages of the AGM418MNA datasheet.

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Full PDF Text Transcription

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AGM418MNA ● General Description The AGM418MNA combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ■100% Avalanche tested ■100% DVDS tested ● Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Product Summary BVDSS 40V RDSON 17mΩ PDFN5*6 Pin Configuration ID 22A Package Marking and Ordering Information Device Marking Device Device Package AGM418MNA AGM418MNA PDFN5*6 Reel Size 330mm Table 1.

Published: Dec 28, 2024 |