DESCRIPTION
The 2SB1132 is available in SOT-89 Package. FEATURES
● Available in SOT-89 Package. ORDERING INFORMATION Package Type Part Number 2SB1132P SOT-89 2SB1132Q 2SB1132R Note SPQ: 1,000pcs/Reel AiT provides all RoHS Compliant Products PIN DESCRIPTION
1. Base 2. Collector 3. Emitter REV1.1 - JUN 2014 RELEASED, JUN 2019 UPDATED - -1- AiT Semiconductor Inc. 2SB1132 GENERAL PURPOSE TRANSISTOR PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS
TA=25°C -VCBO, Collector Base Voltage 40V -VCEO, Collector Emitter Voltage 32V -VEBO, Emitter Base Voltage 5V -IC, Collector Current - DC 1A -ICP, Collector Current - PulseNOTE1 2A Ptot, Total Power Dissipation 0.5W 2WNOTE2 TJ, Junction Temperature 150°C TSTG, Storage Temperature Range -55°C ~150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the ELECTRICAL CHARACTERISTICS
are not implied.
AiT Semiconductor
