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2SB1132 - PNP General Purpose Amplifier

Key Features

  • z Low VCE(SAT)=-0.2V(Typ. ) (IC/IB=-500mA/-50mA). z Complementary NPN type available 2SD1664. Pb Lead-free 2SB1132.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification PNP General Purpose Amplifier FEATURES z Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-500mA/-50mA). z Complementary NPN type available 2SD1664. Pb Lead-free 2SB1132 APPLICATIONS z This device is designed as a general purpose amplifier and switching. ORDERING INFORMATION Type No. Marking 2SB1132 BAP/BAQ/BAR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO IC PD Emitter-Base Voltage Collector Current –DC -Pulse Total Device Dissipation -5 V -1 -2 A 500 mW RθJA Thermal resistance,Junction-to-Ambient 250 ℃/W Tj,Tstg Junction and Storage Temperature -55 to+150 ℃ E028 Rev.A www.gmicroelec.