| Part Number | 2SB1132 Datasheet |
|---|---|
| Manufacturer | Power Silicon |
| Overview | DATA SHEET 2SB1132 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -32 Volts CURRENT -1.0 Ampere FEATURES z PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS z HIGH DC CURRENT . z PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS z HIGH DC CURRENT GAIN z LOW COLLECTOR-EMITTER SATURATION VOLTAGE .181 (4.6) .173( 4.4) .061 (1.55)REF. 0.063 (1.6 ) 0.055 (145 ) .1 6 7( 4. 2 5) . 15 5 (3 .9 4 ) . 10 2 (2 .6 ) .0 91 (2 .3) 1. 2 0 .9 MECHANICAL. |
2SB1132 Datasheet and Specifications PDF
The 2SB1132 is a PNP GENERAL PURPOSE TRANSISTORS.
| Part Number | 2SB1132 Datasheet |
|---|---|
| Description | Transistors |
| Manufacturer | TRANSYS |
| Overview | Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1132 FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) TRANSISTOR (PNP) SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Coll. Power dissipation PCM: 0.5 W (Tamb=25℃) TRANSISTOR (PNP) SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise s. |
| Part Number | 2SB1132 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | ROHM |
| Overview |
Medium Power Transistor (32V,1A)
2SB1132 / 2SA1515S / 2SB1237
Features 1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858
Structure Epitaxial pla.
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858
*Structure Epitaxial planar type PNP silicon transistor *Dimensions (Unit : mm) 2SB1132 4.5 +0.2 *0.1 1.6 + * 0.1 1.5 +0.2 *0.1 2SA1515S 4 + * 0.2 2 + * 0.2 3 *+ 0.2 0.5 *+ 0.1 3Min. +0.2 *0. |
| Part Number | 2SB1132 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | JCET |
| Overview | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1132 TRANSISTOR (PNP) FEATURES z Low VCE(sat) z Compliments 2SD1664 SOT-89-3L 1. BASE 2. COLLECTOR M. z Low VCE(sat) z Compliments 2SD1664 SOT-89-3L 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Continuous Collector Current ICP Pulsed Coll. |