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2SB1132 - PNP Silicon Medium Power Transistor

Key Features

  • Low power dissipation 0.5W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente 2SB1132 -1A, -40V PNP Silicon Medium Power Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low power dissipation 0.5W CLASSIFICATION OF hFE Product Rank 2SB1132-P Range 82~180 Marking BAP 2SB1132-Q 120~270 BAQ 2SB1132-R 180~390 BAR SOT-89 4 123 A EC BD PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch Collector   Base  Emitter FG H J K L REF. A B C D E F Millimeter Min. 4.40 3.94 1.40 Max. 4.60 4.25 1.60 2.30 2.60 1.50 1.70 0.89 1.2 REF. G H J K L Millimeter Min. 0.40 1.50 3.00 Max. 0.58 TYP TYP 0.32 0.52 0.35 0.