SeCoS Halbleitertechnologie GmbH 2SB1132
PNP Silicon Medium Power Transistor
| Part No. | 2SB1132 |
|---|---|
| Datasheet | 2SB1132 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Silicon Medium Power Transistor |
| Buy | Stock & Price |
FEATURES
● Low power dissipation 0.5W CLASSIFICATION OF hFE Product Rank 2SB1132-P Range 82~180 Marking BAP 2SB1132-Q 120~270 BAQ 2SB1132-R 180~390 BAR SOT-89 4 123 A EC BD PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch Collector Base● Emitter FG H J K L REF. A B C D E F Millimeter Min. 4.40 3.94 1.40 Max. 4.60 4.25 1.60 2.30 2.60 1.50 1.70 0.89 1.2 REF. G H J K L Millimeter Min. 0.40 1.50 3.00 Max. 0.58 TYP TYP 0.32 0.52 0.35 0.44
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -40 -32 Emitter-Base Voltage VEBO -5 Collector Current (DC) Collector Power Dissipation IC PC -1 500 Junction & Storage Temperature TJ, TSTG 150, -55~150 Unit V V V A mW °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off c...