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2SD1005 Datasheet PDF

AiT Semiconductor 2SD1005

The 2SD1005-W, 2SD1005-V and 2SD1005-U are available in the SOT-89 package.
Part No. 2SD1005
Datasheet 2SD1005 Download
Manufacturer
AiT Semiconductor
Description SILICON NPN MEDIUM POWER TRANSISTOR
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2SD1005 datasheet page 1 preview

DESCRIPTION

ORDERING INFORMATION FEATURE
● High current (max.1 A).
● High breakdown voltage (max. 80 V). Excellent DC current gain linearity. Package Type Part Number 2SD1005-W SOT-89 2SD1005-V 2SD1005-U SPQ 1,000pcs/Reel AiT provides all RoHS Compliant Products hFE CLASSIFICATION Rank W V U Range 90 ~ 180 135 ~ 270 200 ~ 400 PIN

DESCRIPTION

PIN# 1 2 3 SOT-89

DESCRIPTION

Base Collector Emitter

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise specified. VCBO, Collector to Base Voltage 100 V VCEO, Collector to Emitter Voltage 80 V VEBO, Emitter to Base Voltage 5V IC, Collector Current-Continuous 1A ICM, Collector Current-Continuous (pulse) (1) 1.5 A Pc, Collector Power Dissipation 1300 mW TJ, Junction Temperature 150 °C Tstg, Storage Temperature -55 ~ +150 °C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the

ELECTRICAL CHARACTERISTICS

are not implied.
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