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2N5642 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI 2N5642 is Designed for 28 V Large Signal Class C Amplifier Applications up to 175 MHz.

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Datasheet Details

Part number 2N5642
Manufacturer ASI
File Size 16.77 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet 2N5642 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5642 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5642 is Designed for 28 V Large Signal Class C Amplifier Applications up to 175 MHz. FEATURES INCLUDE: • Emitter Ballasting • Gold Metalization • 3/8" SOE Stud Package MAXIMUM RATINGS IC 3.0 A VCE 35 V VCB PDISS TJ TSTG θJC 65 V 30 W @ TC = 25 OC -65 OC to + 200 OC -65 OC to + 150 OC 5.8 OC/W PACKAGE STYLE .380" 4L STUD 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCES IC = 200 mA BVCEO IC = 200 mA BVEBO IE = 10 mA ICBO VCB = 30 V hFE VCE = 5.0 V IC = 200 mA MINIMUM TYPICAL MAXIMUM 65 35 4.0 1.0 5.0 UNITS V V V mA --- COB VCB = 30 V f = 1.0 MHz 35 pF PG ηC VCC =28 V POUT = 20 W f = 175 MHz 8.