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AT60142ET - Rad Hard 512K x 8 Very Low Power CMOS SRAM

Download the AT60142ET datasheet PDF. This datasheet also covers the AT6 variant, as both devices belong to the same rad hard 512k x 8 very low power cmos sram family and are provided as variant models within a single manufacturer datasheet.

General Description

The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems.

Key Features

  • Operating Voltage: 3.3V.
  • Access Time:.
  • 15 ns (Preview) for 3.3V biased only (AT60142E).
  • 17 ns and 20 ns for 5V Tolerant (AT60142ET) Very Low Power Consumption.
  • Active: 810 mW (Max) @ 15 ns.
  • Standby: 215 µW (Typ) Wide Temperature Range: -55 to +125°C 500 Mils Width Package TTL-Compatible Inputs and Outputs Asynchronous Designed on 0.25 Micron P.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT6-014.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AT6010 Coprocessor Field Programmable Gate Arrays ATMEL
AT6000 Coprocessor Field Programmable Gate Arrays ATMEL
AT6002 Coprocessor Field Programmable Gate Arrays ATMEL
AT6003 Coprocessor Field Programmable Gate Arrays ATMEL
AT6005 Coprocessor Field Programmable Gate Arrays ATMEL

Other Datasheets by Atmel (now Microchip Technology)

Part Number Description
AT60142E Rad Hard 512K x 8 Very Low Power CMOS SRAM
AT61162E Rad Hard 2-Mbit x 8 SRAM Cube
AT68166F Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module
AT68166FT Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Mult
AT68166G Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • Operating Voltage: 3.3V • Access Time: • • • • • • • • • • – 15 ns (Preview) for 3.3V biased only (AT60142E) – 17 ns and 20 ns for 5V Tolerant (AT60142ET) Very Low Power Consumption – Active: 810 mW (Max) @ 15 ns – Standby: 215 µW (Typ) Wide Temperature Range: -55 to +125°C 500 Mils Width Package TTL-Compatible Inputs and Outputs Asynchronous Designed on 0.25 Micron Process No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm 2 Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019 500 Mils Wide FP36 Package ESD Better than 4000V Rad Hard 512K x 8 Very Low Power CMOS SRAM AT60142E AT60142ET Description The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8 bits.