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AT60142ET - Rad Hard 512K x 8 Very Low Power CMOS SRAM

This page provides the datasheet information for the AT60142ET, a member of the AT6 Rad Hard 512K x 8 Very Low Power CMOS SRAM family.

Datasheet Summary

Description

The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems.

Features

  • Operating Voltage: 3.3V.
  • Access Time:.
  • 15 ns (Preview) for 3.3V biased only (AT60142E).
  • 17 ns and 20 ns for 5V Tolerant (AT60142ET) Very Low Power Consumption.
  • Active: 810 mW (Max) @ 15 ns.
  • Standby: 215 µW (Typ) Wide Temperature Range: -55 to +125°C 500 Mils Width Package TTL-Compatible Inputs and Outputs Asynchronous Designed on 0.25 Micron P.

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Datasheet preview – AT60142ET

Datasheet Details

Part number AT60142ET
Manufacturer ATMEL Corporation
File Size 295.56 KB
Description Rad Hard 512K x 8 Very Low Power CMOS SRAM
Datasheet download datasheet AT60142ET Datasheet
Additional preview pages of the AT60142ET datasheet.

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Full PDF Text Transcription

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Features • Operating Voltage: 3.3V • Access Time: • • • • • • • • • • – 15 ns (Preview) for 3.3V biased only (AT60142E) – 17 ns and 20 ns for 5V Tolerant (AT60142ET) Very Low Power Consumption – Active: 810 mW (Max) @ 15 ns – Standby: 215 µW (Typ) Wide Temperature Range: -55 to +125°C 500 Mils Width Package TTL-Compatible Inputs and Outputs Asynchronous Designed on 0.25 Micron Process No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm 2 Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019 500 Mils Wide FP36 Package ESD Better than 4000V Rad Hard 512K x 8 Very Low Power CMOS SRAM AT60142E AT60142ET Description The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8 bits.
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