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AT68166FT - Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Mult

General Description

The AT68166FT is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM) for space applications.

The AT68166FT MCM incorporates four 4Mbit AT60142FT SRAM dice.

It can be organized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8.

Key Features

  • 16 www. DataSheet4U. com Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time:.
  • 25 ns, 20 ns.
  • 18 ns (preliminary information) Very Low Power Consumption.
  • Active: 595 mW per byte (Max) @ 20 ns(1), 415mW per byte (Max) @ 50ns(2).
  • Standby: 15.

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Other Datasheets by Atmel (now Microchip Technology)

Part Number Description
AT68166F Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module
AT68166G Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module
AT60142E Rad Hard 512K x 8 Very Low Power CMOS SRAM
AT60142ET Rad Hard 512K x 8 Very Low Power CMOS SRAM
AT61162E Rad Hard 2-Mbit x 8 SRAM Cube

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • • • • • • • • • • • • • • • 16 www.DataSheet4U.com Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time: – 25 ns, 20 ns – 18 ns (preliminary information) Very Low Power Consumption – Active: 595 mW per byte (Max) @ 20 ns(1), 415mW per byte (Max) @ 50ns(2) – Standby: 15 mW (Typ) Military Temperature Range: -55 to +125°C TTL-Compatible Inputs and Outputs Asynchronous Die manufactured on Atmel 0.25 µm Radiation Hardened Process No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019 ESD Better than 2000V Quality Grades: – QML-Q or V with SMD 5962-06229 – ESCC 950 Mils Wide MQFP 68 Package Mass : 8.5 grams 1.