AT68166FT Datasheet | Atmel

Features - - - - - - - - - - - - - - - 16 .. Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time: - 25 ns, 20 ns - 18 ns (preliminary information) Very Low Power Consumption - Active: 595 m W per byte (Max) @ 20 ns(1), 415m W per byte (Max) @ 50ns(2) - Standby: 15 m W (Typ) Military Temperature Range: -55 to +125°C TTL-patible Inputs and Outputs Asynchronous Die manufactured on Atmel 0.25 µm Radiation Hardened Process No Single Event Latch Up below LET Threshold of 80 Me V/mg/cm2 Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019 ESD Better than 2000V Quality Grades: - QML-Q or V with SMD 5962-06229 - ESCC 950 Mils Wide MQFP 68 Package Mass : 8.5 grams 1. For AT68166FT-20 only. 540m W for AT68166FT-25. 2. For AT68166FT-20 only. 450m W for AT68166FT-25. Rad Hard 16 Mega Bit 3.3V 5V Tolerant SRAM Multi Chip Module AT68166FT Notes: Description The AT68166FT is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM) for space applications. The AT68166FT MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be organized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It bines rad-hard capabilities, a latch-up threshold of 80Me V.cm²/mg, a Multiple Bit Upset immunity and a total dose tolerance of 300Krads, with a fast access time. The MCM packaging technology allows a reduction of the PCB area by 50% with a weight savings of 75% pared to four 4Mbit packages. Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to acmodate the assembly of the four dice on one side of the package which facilitates the power dissipation. The patibility with other products allows designers to easily migrate to the Atmel AT68166FT memory. The AT68166FT is powered at 3.3V and is 5V tolerant. The AT68166FT is processed according to the test methods of the latest revision of the MIL-PRF-38535 or the ESCC 9000. 7531G- AERO- 07/07 Block...