SBT5401
SBT5401 is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Description
- General purpose amplifier
- High voltage application
Features
- high collector breakdown voltage : VCBO = -160V, VCEO = -150V
- Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)
- plementary pair with SBT5551
Ordering Information
Type NO. SBT5401 Marking NFN Package Code SOT-23
Outline Dimensions unit : mm
2.4±0.1 1.30±0.1
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
2.9±0.1
1.12 Max.
0~0.1
KST-2013-000
PIN Connections 1. Base 2. Emitter 3. Collector
-0.03 +0.05
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-160 -150 -5 -600 200 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector-Emitter saturation voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE (1) h FE (2) h FE (3) VCE(sat)(1) VBE(sat)(1) f T...
