MGA-632P8 Datasheet | Avago Technologies

Description Avago Technologies’ MGA-632P8 is an economical, easyto-use Ga As MMIC Low Noise Amplifier (LNA) with active bias. The LNA has low noise with excellent input return loss and high linearity achieved through the use of Avago Technologies’ proprietary 0.5um Ga As Enhancementmode p HEMT process. The LNA has an extra feature that allows a designer to adjust supply current and gain externally. Due to the high isolation between the input and output, gain can be adjusted independently through a resistor in series with a blocking capacitor from the output pin to FB1 pin, without affecting the noise figure. It is housed in a miniature 2.0 x 2.0 x 0.75mm3 8-pin Thin Small Leadless Package (TSLP) package. The pact footprint and low profile coupled with low noise, high gain, excellent input return loss and high linearity make the MGA-632P8 an ideal choice as an LNA for cellular infrastructure for GSM, CDMA, W-CDMA and TD-SCDMA applications. It is designed for optimum use between 1.4GHz to 3GHz. For optimum performance at lower frequency from 400MHz to 1.5GHz, the MGA-631P8 is remended. Both MGA-631P8 and MGA-632P8 share the same package and pinout. Pin Configuration and Package Marking 2.0 x 2.0 x 0.75 mm3 8-lead TSLP Features - Low noise figure - Good input return loss - High linearity performance - High Isolation - Externally adjustable supply current, 40-80m A - Externally adjustable gain, 15-20d B - Ga As E-p HEMT Technology[1] - Low cost small package size: 2.0x2.0x0.75 mm3 - Excellent uniformity in product specifications Specifications 1.95GHz; 4V, 60m A (typ) - 17.6 d B Gain - 0.62 d B Noise Figure - -22.7 d B S11 - -40.5 d B S12 - 34.8 d Bm Output IP3 - 19.2 d Bm Output Power at 1d B gain pression Applications - Low noise amplifier for cellular infrastructure for GSM, CDMA, W-CDMA and TD-SCDMA. - Other ultra low noise applications. Note: [1] Enhancement mode technology employs positive Vgs, thereby eliminating the need of negative gate voltage associated...