MGA-633P8 Datasheet | Avago Technologies

Description Avago Technologies’ MGA-633P8 is an economical, easyto-use Ga As MMIC Low Noise Amplifier (LNA). The LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25um Ga As Enhancement-mode p HEMT process. It is housed in a miniature 2.0 x 2.0 x 0.75mm3 8-pin Quad-Flat-Non-Lead (QFN) package. It is designed for optimum use from 450MHz up to 2GHz. The pact footprint and low profile coupled with low noise, high gain and high linearity make the MGA-633P8 an ideal choice as a low noise amplifier for cellular infrastructure for GSM and CDMA. For optimum performance at higher frequency from 1.5GHz to 2.3GHz, the MGA-634P8 is remended, and from 2.3GHz to 4GHz, the MGA-635P8 is remended. Both MGA-634P8 and MGA-635P8 share the same package and pinout as MGA-633P8 Pin Configuration and Package Marking 2.0 x 2.0 x 0.75 mm3 8-lead QFN [1] [8] 33X[2] [7] [3] [6] [4] [5] [8] [7] [6] [5] [1] [2] [3] [4] Top View Bottom View Pin1 - Vbias Pin2 - RFinput Pin3 - Not Used Pin4 - Not Used Pin5 - Not Used Pin6 - Not Used Pin7 - RFoutput / Vdd Pin8 - Not Used Note: Package marking provides orientation and identification “33” = Device Code “X” = Month Code Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 90 V (Class A) ESD Human Body Model = 600 V (Class 1B) Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Features x Ultra Low noise Figure x High linearity performance x Ga As E-p HEMT Technology[1] x Low cost small package size: 2.0x2.0x0.75 mm3 x Excellent uniformity in product specifications x Tape-and-Reel packaging option available Specifications 900MHz; 5V, 54m A x 18 d B Gain x 0.37 d B Noise Figure x 15d B Input Return Loss x 37 d Bm Output IP3 x 22 d Bm Output Power at 1d B gain pression Applications x Low noise amplifier for cellular infrastructure for GSM and CDMA. x Other ultra low noise application. Simplified Schematic Vdd Rbias C5 R1 R2...