MGA-635T6 Datasheet | Avago Technologies

Description Avago Technologies’ MGA-635T6 is a LNA designed for GPS/ISM/Wimax applications in the (0.9-2.4)GHz frequency range. The LNA uses Avago Technologies’s proprietary Ga As Enhancement-mode p HEMT process to achieve high gain operation with very low noise figures and high linearity. Noise figure distribution is very tightly controlled. Gain and supply current are guaranteed parameters. A CMOS patible shutdown pin is included to turn the LNA off and provide a variable bias. The MGA-635T6 LNA is useable down to 1V operation. It achieves low noise figures and high gain even at 1V, making it suitable for use in critical low power GPS/ISM band applications. ponent Image Surface Mount 2.0x1.3x0.4 mm3 6-lead UTSLP . 3FYM Top View Bottom View Note: Package marking provides orientation and identification “3F” = Product Code “Y” = Year of manufacture “M” = Month of manufacture Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 40 V ESD Human Body Model = 250 V Refer to Avago Technologies Application Note A004R: Electrostatic Discharge, Damage and Control. Features - Low Noise Figure : 0.74d B - High Gain : 14.5d B - High linearity and P1d B - Ga As E-p HEMT Technology - Low ponent count - Wide Supply Voltage : 1V to 3.6V - Shutdown current : < 0.1u A - CMOS patible shutdown pin (VSD) current @ 2.85V : 60u A - Adjustable bias current via one single external resistor/voltage - Shutdown function - Small Footprint: 2 x 1.3mm2 - Low Profile : 0.4 mm - Ext matching for non-GPS freq band operation Specifications At 1.575GHz, 2.85V 6.3m A (Typ) Gain = 14.5 d B (Typ) NF = 0.74 d B (Typ) IIP3 = 3.5 d Bm (Typ) IP1d B = 2.5 d Bm (Typ) S11 = -8 d B (Typ) S22 = -10.4 d B (Typ) At 1.575GHz, 2.85V 8m A (Typ) Gain = 15.7 d B (Typ) NF = 0.8 d B (Typ) IIP3 = 3.5 d Bm (Typ) IP1d B = 1 d Bm (Typ) S11 = -11.8 d B (Typ) S22 = -9.3 d B (Typ) Applications - GPS, ISM & Wi Max Bands LNA Absolute Maximum Rating [1] TA=25C Thermal Resistance [3] (Vdd = 2.85V, Ids = 4.9m A),...