MGA-635P8 Datasheet | Avago Technologies

Description Avago Technologies’ MGA-635P8 is an economical, easyto-use Ga As MMIC Low Noise Amplifier (LNA). The LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25Pm Ga As Enhancement-mode p HEMT process. It is housed in a miniature 2.0 x 2.0 x 0.75mm3 8-pin Quad-Flat-Non-Lead (QFN) package. It is designed for optimum use from 2.3GHz up to 4GHz. The pact footprint and low profile coupled with low noise, high gain and high linearity make the MGA-635P8 an ideal choice as a low noise amplifier for cellular infrastructure for LTE, GSM and CDMA. For optimum performance at lower frequency from 450MHz up to 1.5GHz, MGA-633P8 is remended. For optimum performance at frequency from 1.5GHz up to 2.3GHz, MGA-634P8 is remended. All these 3 products, MGA-633P8, MGA-643P8 and MGA-653P8 share the same package and pinout configuration. Pin Configuration and Package Marking 2.0 x 2.0 x 0.75 mm3 8-lead QFN [1] [8] [2] 35X [7] [3] [6] [4] [5] [8] [7] [6] [5] [1] [2] [3] [4] Top View Bottom View Pin 1 - Vbias Pin 2 - RFinput Pin 3 - Not Used Pin 4 - Not Used Pin 5 - Not Used Pin 6 - Not Used Pin 7 - RFoutput/Vdd Pin 8 - Not Used Note: Package marking provides orientation and identification “35” = Device Code, where X is the month code. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 50 V (Class A) ESD Human Body Model = 500 V (Class 1B) Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Features x Ultra Low noise Figure x High linearity performance x Ga As E-p HEMT Technology[1] x Low cost small package size: 2.0 x 2.0 x 0.75 mm3 x Excellent uniformity in product specifications x Tape-and-Reel packaging option available Specifications 2.5GHz; 5V, 56m A x 18 d B Gain x 0.56 d B Noise Figure x 12.5 d B Input Return Loss x 35.9 d Bm Output IP3 x 22 d Bm Output Power at 1d B gain pression Applications x Low noise amplifier for cellular infrastructure for...