ALD212900 Datasheet PDF | Advanced Linear Devices

Advanced Linear Devices ALD212900

The ALD212900A/ALD212900 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These dual monolithic devices are enhanced additions to the ALD110900A/ ALD110900 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels.

Part No.	ALD212900
Datasheet	ALD212900 Download
Manufacturer	Advanced Linear Devices
Description	MOSFET ARRAY
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GENERAL DESCRIPTION

Intended for low voltage, low power small signal applications, the ALD212900A/ ALD212900 features Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. For example, a nanopower input amplifier stage operating at less than 0.2V supply voltage has been successfully built with these devices. ALD212900A EPAD MOSFETs feature exceptional matched pair device electrical characteristics of Gate Threshold Voltage VGS(th) set precisely at 0.00V +0.01V, IDS = +20µA @ VDS = 0.1V, with a typical offset voltage of only +0.001V (1mV). Built on a single monolithic chip, they also exhibit excellent temperature tracking characteristics. These precision devices are versatile as design components for a broad range of analog small signal applications such as basic building blocks for current mirrors, matching circuits, current sources, differential amplifier input stages, transmission gates, and multiplexers.