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ALD212900 Datasheet MOSFET Array

Manufacturer: Advanced Linear Devices

Overview: ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD212900A/ALD212900 PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR VGS(th)= +0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ALD212900A/ALD212900 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology.

These dual monolithic devices are enhanced additions to the ALD110900A/ ALD110900 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages.

Intended for low voltage, low power small signal applications, the ALD212900A/ ALD212900

Key Features

  • Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than 0.2V supply voltage has been successfully built with these devices. ALD212900A EPAD MOSFETs feature exceptional matched pair device electrical characteristics of G.

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ALD212900 Distributor