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ALD212900 - MOSFET ARRAY

Download the ALD212900 datasheet PDF. This datasheet also covers the ALD212900A variant, as both devices belong to the same mosfet array family and are provided as variant models within a single manufacturer datasheet.

General Description

The ALD212900A/ALD212900 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology.

Key Features

  • Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than 0.2V supply voltage has been successfully built with these devices. ALD212900A EPAD MOSFETs feature exceptional matched pair device electrical characteristics of G.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ALD212900A-AdvancedLinearDevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ALD212900
Manufacturer Advanced Linear Devices
File Size 515.01 KB
Description MOSFET ARRAY
Datasheet download datasheet ALD212900 Datasheet

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Other Datasheets by Advanced Linear Devices

Part Number Description
ALD212900A MOSFET ARRAY
ALD212902 MOSFET
ALD212904 MOSFET
ALD212908 PRECISION N-CHANNEL MOSFET ARRAY
ALD212908A PRECISION N-CHANNEL MOSFET ARRAY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD212900A/ALD212900 PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR VGS(th)= +0.00V GENERAL DESCRIPTION The ALD212900A/ALD212900 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These dual monolithic devices are enhanced additions to the ALD110900A/ ALD110900 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD212900A/ ALD212900 features Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges.